NIST, global collaborators propose universal ways to measure, evaluate next-gen field-effect devices for smartphones, other devices.

View as a Web Page Leading Experts Suggest Guidelines for Assessing Emerging Transistor Performance To continue making smartphones, laptops, and other devices more powerful and energy efficient, industry is intensely focused on identifying promising next-generation designs and materials for the principal building blocks of modern electronics: the tiny electrical on-off switches known as field-effect transistors (FETs). When deciding how to direct billions of funding dollars for next-generation transistors, investors will base many of their decisions on published research results. But a dismaying amount of research on FETs currently suffers from inconsistent reporting and benchmarking of results, increasing risks of misleading conclusions and inaccurate claims that set false expectations for the field. This problem and possible solutions are outlined in an article published today by an international group of leading experts on semiconductor devices. Read More IN CASE YOU MISSED IT NIST Researchers Resurrect and Improve a Technique for Detecting Transistor Defects February 3, 2022 A traditional method may provide a new standard for measuring electric current. Read More

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